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NTMD4820N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)jk
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Tem-
perature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
26
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 100 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coeffi-
cient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
5.0
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 7.5 A
I D = 6.5 A
15
20
20
27
m W
Forward Transconductance
g FS
V DS = 1.5 V, I D = 7.5 A
21
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
940
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz, V DS = 15 V
V GS = 4.5 V, V DS = 15 V, I D = 7.5 A
V GS = 10 V, V DS = 15 V, I D = 7.5 A
225
125
7.7
1.1
3.3
3.2
15.2
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
9.4
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DD = 15 V,
I D = 1.0 A, R G = 6.0 W
4.0
21
6.5
ns
DRAIN ? TO ? SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I D = 2.0 A
T J = 25 ° C
T J = 125 ° C
0.75
0.59
1.0
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 2.0 A
17.8
8.3
9.5
8.0
ns
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.66
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.20
1.50
nH
nH
Gate Resistance
R G
1.5
3.0
W
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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